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JIQUN
| Model： | G2K2P10D3E |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| Description： | MOSFET P-CH ESD |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| Quantity： | 7970 |
| RoHS Status： | 1 |
|
Obtain Quotation
|
Quantity
Price
Total Price
1
$0.5800
$0.5800
10
$0.4900
$4.9000
100
$0.3400
$34.0000
500
$0.2700
$135.0000
1000
$0.2200
$220.0000
2000
$0.1900
$380.0000
5000
$0.1800
$900.0000
10000
$0.1700
$1,700.0000
25000
$0.1700
$4,250.0000
50000
$0.1600
$8,000.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (3.15x3.05) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1668 pF @ 50 V |
